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GAA（Gate All Around）構造のトランジスタ\n
FinFETよりも、さらに小さな面積で製造できる\n
── 『3nm、2nm 半導体プロセスが実寸法を表していない理由』

"}}]]}],["$","div",null,{"className":"$undefined","style":{"display":"flex","gap":"0.4rem","flexWrap":"wrap"},"children":[false,[["$","a","2AE0",{"href":"/2AE0","style":{"border":"solid 1px var(--post-edge-color)","borderTop":"none","borderRadius":"0 0 0.6rem 0.6rem","padding":"0.1rem 0.5rem"},"children":"『3nm、2nm 半導体プロセスが実寸法を表していない理由』"}]]]}]]}]

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GAAトランジスタ

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